DP AK
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 12 July 2011 Product data sheet
1. Product prof...
DP AK
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
Rev. 1 — 12 July 2011 Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for standard and logic level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -
Typ -
Max Unit 40 90 128 V A W
Static characteristics RDSon VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 11 5.2 6.2 mΩ
NXP Semiconductors
BUK626R2-40C
N-channel TrenchMOS intermediate level FET
Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 90 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25...