BUK725R0-40C

BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment up to 175°C rating 1.3 Applications „ 12V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width Modulation (PWM) applications 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 40 75 157 240 Unit V A W mJ drain-source voltage drain current total power dissipation Symbol Parameter Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 15 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 27 nC Static characteristics RDSon drain-source on-state resistance [1] - 4.1 5 mΩ Current is limited by package. NXP Semiconduct...