BUK725R0-40C
N-channel TrenchMOS standard level FET
Rev. 01 — 23 March 2009 Product data sheet
1. Product profile
1.1 G...
BUK725R0-40C
N-channel TrenchMOS standard level FET
Rev. 01 — 23 March 2009 Product data sheet
1. Product profile
1.1 General description
Standard level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation (PWM) applications
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 40 75 157 240 Unit V A W mJ drain-source voltage drain current total power dissipation Symbol Parameter
Avalanche ruggedness EDS(AL)S non-repetitive drain-source ID = 75 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped Dynamic characteristics QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 32 V; Tj = 25 °C; see Figure 15 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12; see Figure 13 27 nC
Static characteristics RDSon drain-source on-state resistance
[1]
-
4.1
5
mΩ
Current is limited by package.
NXP Semiconduct...