MOSFET
D2
PA K
PSMN8R0-40BS
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012 Product data sheet
1....
Description
D2
PA K
PSMN8R0-40BS
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC convertors Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance gate-drain charge total gate charge non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 VGS = 10 V; ID = 25 A; VDS = 20 V; see Figure 14; see Figure 15 Min Typ 6.2 Max 40 77 86 7.6 Unit V A W mΩ
Static characteristics
Dynamic characteristics QGD QG(tot) EDS(AL)S 3.8 21 43 nC nC mJ
Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 77 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω
NXP Semiconductors
PSMN8R0-40BS
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain[1] source mounting ba...
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