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PMGD370XN

Philips

Dual N-channel extremely low level FET


Description
PMGD370XN Dual N-channel µTrenchMOS™ extremely low level FET MBD128 Rev. 01 — 27 February 2004 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than S...



Philips

PMGD370XN

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