NX3020NAKS

NX3020NAKS 11 November 2013 30 V, 180 mA dual N-channel Trench MOSFET Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -20 Typ Max 30 20 180 Unit V V mA Static characteristics (per transistor) drain-source on-state resistance [1] 2 - 2.7 4.5 Ω Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 1 2 3 G1 G2 Simplified outline 6 5 4 Graphic symbol D1 D2 TSSOP6 (SOT363) S1 S2 017aaa256 6. Ordering information Table 3. Ordering information Package Name NX3020NAKS TSSOP6 Desc...