PSMN1R5-40PS

PSMN1R5-40PS 15 July 2013 TO -2 20A B N-channel 40 V 1.6 mΩ standard level MOSFET in TO220 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching and conduction losses Robust construction for demanding applications Standard level gate 3. Applications Battery-powered tools Load switching Motor control Uninterruptible power supplies 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 14 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 20 V; Tj = 25 °C; Fig. 15; Fig. 16 32 136 nC nC [2] [1] Min - Typ - Max 40 150 338 Unit V A W Static characteristics drain-source on-state resistance 1.9 1.3 2.3 1.6 mΩ mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN1R5-40PS N-channel 40 V 1.6 mΩ standard level MOSFET in TO220 Symbol EDS(AL)S Parameter non-repetitive drainsource avalanche energy [1] [2] Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 150 A; Vsup ≤ 40 V; unclamped; RGS = ...