SO T2 3
PMV90EN
30 V, single N-channel Trench MOSFET
Rev. 1 — 13 February 2012 Product data sheet
1. Product profile
1...
SO T2 3
PMV90EN
30 V, single N-channel Trench MOSFET
Rev. 1 — 13 February 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 1.9 A; Tj = 25 °C
[1]
Conditions Tamb = 25 °C
Min -20 -
Typ 70
Max 30 20 2.1 84
Unit V V A mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 2
S
017aaa253
Simplified outline
3
Graphic symbol
D
G
SOT23 (TO-236AB)
NXP Semiconductors
PMV90EN
30 V, single N-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information Package Name PMV90EN TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4. PMV90EN
[1] % = placeholder for manufacturing site code
Marking codes Marking code[...