PMV37EN2
30 V, N-channel Trench MOSFET
10 January 2017
Product data sheet
1. General description
N-channel enhancement...
PMV37EN2
30 V, N-channel Trench MOSFET
10 January 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipation capability of 1115 mW
3. Applications
Relay driver High-speed line driver Low-side load switch Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 4.5 A; Tj = 25 °C
Min Typ Max
- - 30
-20 -
[1] -
-
20 5.6
- 31 36
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Unit V V A
mΩ
NXP Semiconductors
PMV37EN2
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
D
G
S 017aaa253
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV37EN2
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
7. Marking
Table 4. Marking codes Type number PMV37EN2
[1] % = placeholder for...