PMN49EN

PMN49EN N-channel TrenchMOS logic level FET Rev. 01 — 13 April 2007 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Logic level threshold I Fast switching 1.3 Applications I Battery management I High-speed switching 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 47 mΩ I ID ≤ 4.6 A I QGD = 1.6 nC (typ) 2. Pinning information Table 1. Pin 1, 2, 5, 6 3 4 Pinning Description drain (D) gate (G) source (S) 1 2 3 mbb076 Simplified outline 6 5 4 Symbol D G S SOT457 (TSOP6) NXP Semiconductors PMN49EN N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Package Name PMN49EN SC-74 Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Type number 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tsp = 25 °C Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; see Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tsp = 25 °C; see Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −55 −5...