PMDPB95XNE

PMDPB95XNE 26 September 2012 30 V dual N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm Exposed drain pad for excellent thermal conduction ESD protection up to 1.8 kV 1.3 Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disk and computing power management 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 2 A; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -12 Typ Max 30 12 3.1 Unit V V A Static characteristics (per transistor) drain-source on-state resistance [1] 2 - 95 120 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product NXP Semiconductors PMDPB95XNE 30 V dual N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 D1 D2 so...