PMZB420UN
83B
30 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012 Product data sheet
1. Product profile
1.1 Gene...
PMZB420UN
83B
30 V, single N-channel Trench MOSFET
Rev. 1 — 11 May 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO
T8
1.2 Features and benefits
Fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.37 mm height
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 200 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8 -
Typ 420
Max 30 8 900 490
Unit V V mA mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
PMZB420UN
30 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 3 2 Transparent top view
G S
017aaa253
Simplified outline
Graphic symbol
D
SOT883B (DFN1006B-3)
3. Ordering information
Table 3. Ordering information Package Name PMZB420UN DFN1006B-3 Description Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm Version...