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PMZB370UNE

NXP Semiconductors
Part Number PMZB370UNE
Manufacturer NXP Semiconductors
Description MOSFET
Published Aug 18, 2014
Detailed Description PMZB370UNE 83B 30 V, single N-channel Trench MOSFET Rev. 1 — 8 May 2012 Product data sheet 1. Product profile 1.1 Gene...
Datasheet PDF File PMZB370UNE PDF File

PMZB370UNE
PMZB370UNE

Overview
PMZB370UNE 83B 30 V, single N-channel Trench MOSFET Rev.
1 — 8 May 2012 Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO T8 1.
2 Features and benefits  Very fast switching  Trench MOSFET technology  Low threshold voltage  Ultra thin package profile with 0.
37 mm height  ESD protection up to 2 kV 1.
3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-s...


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