Document
PMZ1000UN
N-channel TrenchMOS standard level FET
Rev. 2 — 17 September 2010
BOTTOM VIEW
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Fast switching Low conduction losses due to low on-state resistance Saves PCB space due to small footprint (90 % smaller than SOT23) Suitable for use in compact designs due to low profile (55 % lower than SOT23)
1.3 Applications
Driver circuits Switching in portable appliances
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tamb = 25 °C; VGS = 10 V; see Figure 1 Tamb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C; see Figure 8 Min Typ Max 30 480 350 1 Unit V mA mW Ω
Static characteristics
NXP Semiconductors
PMZ1000UN
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain
1 3 2 Transparent top view
G
mbb076
Simplified outline
Graphic symbol
D
SOT883 (SC-101)
S
3. Ordering information
Table 3. Ordering information Package Name PMZ1000UN SC-101 Description Version leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 Type number
4. Marking
Table 4. Marking codes Marking code 6N Type number PMZ1000UN
5. Limiting values
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature Tamb = 25 °C; VGS = 10 V; see Figure 1 Tamb = 25 °C; tp ≤ 10 μs; pulsed Tamb = 25 °C; see Figure 2 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −8 −55 −55 Max 30 30 +8 480 1.8 350 +150 +150 Unit V V V mA A mW °C °C
PMZ1000UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 September 2010
2 of 14
NXP Semiconductors
PMZ1000UN
N-channel TrenchMOS standard level FET
Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Source-drain diode IS VESD source current electrostatic discharge voltage Tamb = 25 °C HBM; C = 100 pF; R = 1.5 kΩ MM; C = 200 pF 480 60 30 mA V V Electrostatic discharge Conditions Min Max Unit
120 Ider (%) 80
03aa25
120 Pder (%) 80
03aa17
40
40
0 0 50 100 150 Tsp (°C) 200
0 0 50 100 150 Tsp (°C) 200
ID - × 100 % I der = ------------------I D ( 25 ° C ) Fig 1. Normalized continuous drain current as a function of solder point temperature Fig 2.
P tot - × 100 % P der = ----------------------P tot ( 25 ° C ) Normalized total power dissipation as a function of solder point temperature
PMZ1000UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 September 2010
3 of 14
NXP Semiconductors
PMZ1000UN
N-channel TrenchMOS standard level FET
6. Thermal characteristics
Table 6. Symbol Rth(j-sp) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Conditions see Figure 3
[1]
Min -
Typ -
Max 50 355
Unit K/W K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
102
003aab831
Zth(j-sp) (K/W)
δ = 0.5
0.2 10 0.1 0.05 0.02 single pulse
tp T P δ= tp T
t
1 10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 3.
Transient thermal impedance from junction to solder point as a function of pulse duration
PMZ1000UN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 September 2010
4 of 14
NXP Semiconductors
PMZ1000UN
N-channel TrenchMOS standard level FET
7. Characteristics
Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 μA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 0.25 mA; VDS = VGS; see Figure 6 and 7 Tj = 25 °C Tj = 150 °C Tj = −55 °C IDSS drain leakage current VDS = 30 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±8 V; VDS = 0 V VGS = 4.5 V; ID .