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PMZ390UN Dataheets PDF



Part Number PMZ390UN
Manufacturers NXP Semiconductors
Logo NXP Semiconductors
Description N-channel TrenchMOS standard level FET
Datasheet PMZ390UN DatasheetPMZ390UN Datasheet (PDF)

PMZ390UN N-channel TrenchMOS standard level FET Rev. 01 — 12 July 2007 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Fast switching I Standard level compatible threshold 1.3 Applications I Driver circuits I Load switching in portable ap.

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PMZ390UN N-channel TrenchMOS standard level FET Rev. 01 — 12 July 2007 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Fast switching I Standard level compatible threshold 1.3 Applications I Driver circuits I Load switching in portable appliances 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 460 mΩ I ID ≤ 1.78 A I Ptot ≤ 2.50 W 2. Pinning information Table 1. Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 3 2 Transparent top view G mbb076 Simplified outline Symbol D SOT883 (SC-101) S NXP Semiconductors PMZ390UN N-channel TrenchMOS standard level FET 3. Ordering information Table 2. Ordering information Package Name PMZ390UN SC-101 Description leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm Version SOT883 Type number 4. Limiting values CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Vesd drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current electrostatic discharge voltage Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs all pins human body model; C = 100 pF; R = 1.5 kΩ machine model; C = 200 pF 60 30 V V Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −55 −55 Max 30 30 ±8 1.78 1.13 3.56 2.50 +150 +150 1.78 3.56 Unit V V V A A A W °C °C A A Source-drain diode Electrostatic discharge PMZ390UN_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 12 July 2007 2 of 13 NXP Semiconductors PMZ390UN N-channel TrenchMOS standard level FET 120 Pder (%) 80 03aa17 120 Ider (%) 80 03aa25 40 40 0 0 50 100 150 Tsp (°C) 200 0 0 50 100 150 Tsp (°C) 200 P tot P der = ----------------------- × 100 % P tot ( 25 ° C ) Fig 1. Normalized total power dissipation as a function of solder point temperature 10 ID (A) 1 Limit RDSon = VDS / ID ID I der = ------------------- × 100 % I D ( 25 ° C ) Fig 2. Normalized continuous drain current as a function of solder point temperature 003aab833 tp = 10 µ s 100 µ s DC 10-1 1 ms 10 ms 100 ms 10-2 10-1 1 10 102 VDS (V) 103 Tmb = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMZ390UN_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 12 July 2007 3 of 13 NXP Semiconductors PMZ390UN N-channel TrenchMOS standard level FET 5. Thermal characteristics Table 4. Rth(j-sp) Rth(j-a) [1] Thermal characteristics Conditions see Figure 4 [1] Symbol Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient Min - Typ 670 Max 50 - Unit K/W K/W Mounted on a printed-circuit board; vertical in still air. 102 003aab831 Zth(j-sp) (K/W) δ = 0.5 0.2 10 0.1 0.05 0.02 single pulse tp T P δ= tp T t 1 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMZ390UN_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 12 July 2007 4 of 13 NXP Semiconductors PMZ390UN N-channel TrenchMOS standard level FET 6. Characteristics Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 0.25 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C Tj = 150 °C Tj = −55 °C IDSS drain leakage current VDS = 30 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±8 V; VDS = 0 V VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8 Tj = 25 °C Tj = 150 °C VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8 VGS = 1.8 V; ID = 0.075 A; see Figure 6 and 8 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage IS = 0.3 A; VGS = 0 V; see Figure 13 VDS = 15 V; RL = 15 Ω; VGS = 10 V; RG = 6 Ω VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 14 ID = 1 A; VDS = 15 V; VGS .


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