Document
PMZ390UN
N-channel TrenchMOS standard level FET
Rev. 01 — 12 July 2007
BOTTOM VIEW
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23 I Low on-state resistance I Leadless package I Footprint 90 % smaller than SOT23 I Fast switching I Standard level compatible threshold
1.3 Applications
I Driver circuits I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 30 V I RDSon ≤ 460 mΩ I ID ≤ 1.78 A I Ptot ≤ 2.50 W
2. Pinning information
Table 1. Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
1 3 2 Transparent top view
G
mbb076
Simplified outline
Symbol
D
SOT883 (SC-101)
S
NXP Semiconductors
PMZ390UN
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information Package Name PMZ390UN SC-101 Description leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm Version SOT883 Type number
4. Limiting values
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Vesd drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current electrostatic discharge voltage Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs all pins human body model; C = 100 pF; R = 1.5 kΩ machine model; C = 200 pF 60 30 V V Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; see Figure 2 Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3 Tmb = 25 °C; see Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min −55 −55 Max 30 30 ±8 1.78 1.13 3.56 2.50 +150 +150 1.78 3.56 Unit V V V A A A W °C °C A A
Source-drain diode
Electrostatic discharge
PMZ390UN_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 July 2007
2 of 13
NXP Semiconductors
PMZ390UN
N-channel TrenchMOS standard level FET
120 Pder (%) 80
03aa17
120 Ider (%) 80
03aa25
40
40
0 0 50 100 150 Tsp (°C) 200
0 0 50 100 150 Tsp (°C) 200
P tot P der = ----------------------- × 100 % P tot ( 25 ° C ) Fig 1. Normalized total power dissipation as a function of solder point temperature
10 ID (A) 1 Limit RDSon = VDS / ID
ID I der = ------------------- × 100 % I D ( 25 ° C ) Fig 2. Normalized continuous drain current as a function of solder point temperature
003aab833
tp = 10 µ s
100 µ s
DC 10-1 1 ms 10 ms 100 ms
10-2 10-1
1
10
102
VDS (V)
103
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMZ390UN_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 July 2007
3 of 13
NXP Semiconductors
PMZ390UN
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4. Rth(j-sp) Rth(j-a)
[1]
Thermal characteristics Conditions see Figure 4
[1]
Symbol Parameter thermal resistance from junction to solder point thermal resistance from junction to ambient
Min -
Typ 670
Max 50 -
Unit K/W K/W
Mounted on a printed-circuit board; vertical in still air.
102
003aab831
Zth(j-sp) (K/W)
δ = 0.5
0.2 10 0.1 0.05 0.02 single pulse
tp T P δ= tp T
t
1 10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PMZ390UN_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 12 July 2007
4 of 13
NXP Semiconductors
PMZ390UN
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 0.25 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 °C Tj = 150 °C Tj = −55 °C IDSS drain leakage current VDS = 30 V; VGS = 0 V Tj = 25 °C Tj = 150 °C IGSS RDSon gate leakage current drain-source on-state resistance VGS = ±8 V; VDS = 0 V VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8 Tj = 25 °C Tj = 150 °C VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8 VGS = 1.8 V; ID = 0.075 A; see Figure 6 and 8 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage IS = 0.3 A; VGS = 0 V; see Figure 13 VDS = 15 V; RL = 15 Ω; VGS = 10 V; RG = 6 Ω VGS = 0 V; VDS = 25 V; f = 1 MHz; see Figure 14 ID = 1 A; VDS = 15 V; VGS .