PSMN2R9-30MLC

PA K PSMN2R9-30MLC N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 2 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. LF 33 1.2 Features and benefits  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications  DC-to-DC converters  Load switching  Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 10 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 10 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 12; see Figure 13 VGS = 4.5 V; ID = 25 A; VDS = 15 V; see Figure 12; see Figure 13 4.4 16.7 nC nC Conditions Tj = 25 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min -55 - Typ 3.3 2.45 Max 30 70 91 175 3.8 2.95 Unit V A W °C mΩ mΩ Static characteristics [1] Continuous current is limited by package. NXP Semiconductors PSMN2R9-30MLC N-channel 30 V 2.95...