PSMN4R1-30YLC

PSMN4R1-30YLC 12 February 2013 LF PA K N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High reliability Power SO8 package, qualified to 175°C Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 3. Applications DC-to-DC converters Load switching Power OR-ing Server power supplies Sync rectifier 4. Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 Min -55 Typ Max 30 92 67 175 Unit V A W °C Static characteristics drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C; Fig. 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 20 A; VDS = 15 V; Fig. 14; Fig. 15 3.5 nC 3.65 4.35 mΩ 4.75 5.7 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PSMN4R1-30YLC N-channel 30 V 4.35mΩ logic level MOSFET in LFPAK using NextPower technology ...