PMGD130UN

PMGD130UN 20 V, dual N-channel Trench MOSFET Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching sircuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -8 Typ 118 Max 20 8 1.3 145 Unit V V A mΩ Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors PMGD130UN 20 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 1 2 3 G1 S1 S2 G2 017aaa254 Simplified outline 6 5 4 Graphic symbol D1 D2 SOT363 (TSSOP6) 3. Ordering information Table 3. Ordering information Package Name PMGD130UN TSSOP6 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4. Marking Table...