PMF63UN

SO T3 PMF63UN 20 V, single N-channel Trench MOSFET Rev. 1 — 22 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 23 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.8 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 63 Max 20 8 1.9 74 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 3 D Simplified outline Graphic symbol G S 017aaa253 SOT323 (SC-70) NXP Semiconductors PMF63UN 20 V, single N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Package Name PMF63UN SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number 4. Marking Table 4. PMF63UN [1] % = placeholder for manufacturing site code Marking codes Marking code[1] V8% T...