PMDPB42UN

PMDPB42UN 020 -6 20 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. DF N2 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  Exposed drain pad for excellent thermal conduction 1.3 Applications  Charging switch for portable devices  DC-to-DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disc and computing power management 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 3.9 A; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -8 Typ 40 Max 20 8 5.1 50 Unit V V A mΩ Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors PMDPB42UN 20 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 D1 D2 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 drain TR1 drain TR2 ...