PMFPB8032XP
21 December 2012
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
Product data sheet
1. General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin D...
