PMF170XP
29 October 2013
SO
T3 23
20 V, 1 A P-channel Trench MOSFET
Product data sheet
1. General description
P-cha...
PMF170XP
29 October 2013
SO
T3 23
20 V, 1 A P-channel Trench MOSFET
Product data sheet
1. General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Low RDSon Very fast switching Trench MOSFET technology
3. Applications
Relay driver High-speed line driver High-side loadswitch Switching circuits
4. Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb 25 °C VGS = -4.5 V; ID = -1 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -12 -
Typ -
Max -20 12 -1
Unit V V A
Static characteristics drain-source on-state resistance
[1]
2
-
175
200
mΩ
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
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NXP Semiconductors
PMF170XP
20 V, 1 A P-channel Trench MOSFET
5. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
G
1 2
Simplified outline
3
Graphic symbol
D
SC-70 (SOT323)
S
017aaa094
6. Ordering information
Table 3. Ordering information Package Name PMF170XP SC-70 Description plastic surface-mounted package; 3 leads Version SOT323 Type number
7. Marking
Table 4. Marking codes Marking code
[1]
Type number PMF170XP
[1]
...