PMDPB70XP

PMDPB70XP 30 V, dual P-channel Trench MOSFET Rev. 1 — 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Trench MOSFET technology  Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm  Exposed drain pad for excellent thermal conduction 1.3 Applications  Charging switch for portable devices  DC/DC converters  Small brushless DC motor drive  Power management in battery-driven portables  Hard disc and computing power management 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = -4.5 V; ID = -2.9 A; Tj = 25 °C [1] Quick reference data Parameter Conditions Tj = 25 °C Min -12 Typ 70 Max -30 12 -3.8 87 Unit V V A mΩ Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors PMDPB70XP 30 V, dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 D1 D2 source TR1 gate TR1 drain TR2 source TR2 gate TR2 drain TR1 drain TR1 drain TR2 1 2 3 G1 S1 S2 G2 017aa...