PMZB290UNE
83B
20 V, single N-channel Trench MOSFET
Rev. 3 — 23 March 2012 Product data sheet
1. Product profile
1.1 G...
PMZB290UNE
83B
20 V, single N-channel Trench MOSFET
Rev. 3 — 23 March 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO
T8
1.2 Features and benefits
Very fast switching Low threshold voltage Trench MOSFET technology ESD protection up to 2 kV Ultra thin package profile of 0.37mm
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -8 -
Typ 290
Max 20 8 1 380
Unit V V A mΩ
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors
PMZB290UNE
20 V, single N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 3 2 Transparent top view
G D
Simplified outline
Graphic symbol
DFN1006B-3 (SOT883B)
S
017aaa255
3. Ordering information
Table 3. Ordering information Package Name PMZB290UNE DFN1006B-3 Description Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm Versio...