PMZB290UNE

PMZB290UNE 83B 20 V, single N-channel Trench MOSFET Rev. 3 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. SO T8 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  Ultra thin package profile of 0.37mm 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 500 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 290 Max 20 8 1 380 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors PMZB290UNE 20 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 3 2 Transparent top view G D Simplified outline Graphic symbol DFN1006B-3 (SOT883B) S 017aaa255 3. Ordering information Table 3. Ordering information Package Name PMZB290UNE DFN1006B-3 Description Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm Versio...