PSMN6R0-25YLB

LF PA K PSMN6R0-25YLB N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications  DC-to-DC converters  Load switching  Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 20 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 20 A; Tj = 25 °C; see Figure 12 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 20 A; VDS = 12 V; see Figure 14; see Figure 15 2.6 9 nC nC Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 6.7 5.1 Max 25 73 58 175 7.9 6.1 Unit V A W °C mΩ mΩ Static characteristics NXP Semiconductors PSMN6R0-25YLB N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology 2. Pinning...