PSMN1R9-25YLC

LF PA K PSMN1R9-25YLC N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimised for 4.5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD and QOSS for high system efficiencies at low and high loads 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Power OR-ing „ Server power supplies „ Sync rectifier 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 [1] Min -55 Typ 2.2 Max 25 100 141 175 2.7 Unit V A W °C mΩ total power dissipation Tmb = 25 °C; see Figure 2 junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 12 Static characteristics - - 1.7 2.05 mΩ NXP Semiconductors PSMN1R9-25YLC N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using Quick reference data …continued Parameter gate-drain charge total gate charge Conditions VGS = 4.5 V; ID...