Document
BUK75/764R3-40B
TrenchMOS™ standard level FET
Rev. 01 — 09 April 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK754R3-40B in SOT78 (TO-220AB) BUK764R3-40B in SOT404 (D2-PAK).
1.2 Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 961 mJ s ID ≤ 75 A s RDSon = 3.8 mΩ (typ) s Ptot ≤ 254 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
2
MBK106
Simplified outline
mb
Symbol
[1]
mb
d
g s
MBB076
1 2 3
1
3
MBK116
SOT78 (TO-220AB)
[1]
SOT404
(D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors
BUK75/764R3-40B
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current total power dissipation storage temperature junction temperature reverse drain current (DC) peak reverse drain current Tmb = 25 °C Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting Tmb = 25 °C
[1] [2] [1] [2] [2]
Conditions RGS = 20 kΩ
Min −55 −55 -
Max 40 40 ±20 176 75 75 706 254 +175 +175 176 75 706 961
Unit V V V A A A A W °C °C A A A mJ
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tmb = 25 °C; Figure 1
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
[1] [2]
Current is limited by power dissipation chip rating. Continuous current is limited by package.
9397 750 11133
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 09 April 2003
2 of 15
Philips Semiconductors
BUK75/764R3-40B
TrenchMOS™ standard level FET
120 Pder (%) 80
03na19
200 ID (A) 150
03nk47
100
40 50 Capped at 75 A due to package
0 0 50 100 150 200 Tmb (° C)
0 0 50 100 150 200 Tmb (°C)
P tot P der = ---------------------- × 100 % P °
tot ( 25 C )
VGS ≥ 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 Limit RDSon = VDS/ID
03nk45
ID (A)
tp = 10 µ s
102
100 µ s
Capped at 75 A due to package
1 ms
10 ms 10 DC 100 ms
1 10-1
1
10
VDS (V)
102
Tmb = 25 °C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11133
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 09 April 2003
3 of 15
Philips Semiconductors
BUK75/764R3-40B
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Figure 4 Min Typ Max Unit 0.59 K/W thermal resistance from junction to mounting base thermal resistance from junction to ambient SOT78 (TO-220AB) SOT404 (D2-PAK) vertical in still air minimum footprint; mounted on a PCB 60 50 K/W K/W Symbol Parameter
4.1 Transient thermal impedance
1 Zth(j-mb) (K/W) δ = 0.5
03nk46
0.2 10-1 0.1 0.05 0.02 10-2 P δ=
tp T
single shot tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1 t
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11133
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 — 09 April 2003
4 of 15
Philips Semiconductors
BUK75/764R3-40B
TrenchMOS™ standard level FET
5. Characteristics
Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 °C Tj = −55 °C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C Tj = 175 °C Tj = −55 °C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 °C Tj = 175 °C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 °C Tj = 175 °C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Ld total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance from drain lead 6 mm from package to centre of die from contact screw on mounting base to centre of die SOT78 .