BUK6E2R0-30C

BUK6E2R0-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 7 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Suitable for intermediate level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications  12 V Automotive systems  Electric and electro-hydraulic power steering  Motors, lamps and solenoid control  Start-Stop micro-hybrid applications  Transmission control  Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 [1] Min - Typ - Max Unit 30 120 306 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 16 1.9 2.2 mΩ Avalanche ruggedness EDS(AL)S non-repetitive ID = 120 A; Vsup ≤ 30 V; drain-source RGS = 50 Ω; VGS = 10 V; avalanche energy Tj(init) = 25 °C; unclamped 1.7 J [1] Continuous current is limited by package. NXP Semiconductors BUK6E2R0-30C N-channel TrenchMOS ...