BUK9E04-30B
TrenchMOS™ logic level FET
Rev. 01 — 14 November 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible.
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