BUK6213-30A

BUK6213-30A TrenchMOS™ Intermediate level FET M3D300 Rev. 02 — 22 September 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. 1.2 Features s Low on-state resistance s 175 °C rated s Q101 compliant s Intermediate level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 267 mJ s ID ≤ 55 A s RDSon = 10 mΩ (typ) s Ptot ≤ 102 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428 (D-PAK), simplified outline and symbol Simplified outline [1] Description gate (g) drain (d) source (s) mounting base; connected to drain (d) Symbol d mb g s MBB076 2 1 Top view 3 MBK091 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the package. Philips Semiconductors BUK6213-30A TrenchMOS™ Intermediate level FET 3. Ordering information Table 2: Ordering information Package Name BUK6213-30A Description Plastic single-ended surface mounted package Version SOT428 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj I...