BUK6213-30A
TrenchMOS™ Intermediate level FET
M3D300
Rev. 02 — 22 September 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.
1.2 Features
s Low on-state resistance s 175 °C rated s Q101 compliant s Intermed...
