Document
A Business Partner of Renesas Electronics Corporation.
NX6350GP Series
FOR 40GBASE-LR4 & 10 Gb/s E-PON ONU APPLICATION DESCRIPTION
The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Data Sheet
R08DS0065EJ0100 Rev.1.00 Jul 05, 2012
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
APPLICATIONS
• • • 40GBASE-LR4 10 Gb/s E-PON ONU Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)
FEATURES
• • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA η d = 0.35 W/A TC = −5 to +85° C
φ 5.6 mm
7.5 mm
R08DS0065EJ0100 Rev.1.00 Jul 05, 2012
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A Business Partner of Renesas Electronics Corporation.
NX6350GP Series
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
(φ 5.6) *2 (φ 4.3)
*2
(φ 3.75)
*2
1.0±0.1
110°±2°
(0.3)
*2
BOTTOM VIEW
1 2 4 3
(0.3)
*2
Focal Point
*1
Δ x = ±200 μ m MAX. Δ y = ±200 μ m MAX.
7.5±0.5
3.97±0.15
PIN CONNECTIONS
1 LD 2 Reference Plane 3 PD 4
1.2±0.1 15.0±1.0
4– φ 0.45
φ 2.0
P.C.D
*1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension.
R08DS0065EJ0100 Rev.1.00 Jul 05, 2012
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A Business Partner of Renesas Electronics Corporation.
NX6350GP Series
Chapter Title
ORDERING INFORMATION
Part Number NX6350GPxx∗1$= Package 4-pin CAN with aspherical lens cap Pin Connections
1 LD 2 4
3 PD
Note:
∗1. The last two digits (“xx”) of Part Number indicates Wavelength Code. The relationships between the code and wavelength are as follows. WAVELENGTH CODE 27 29 31 33 WAVELENGTH (nm) 1 270 1 290 1 310 1 330
Remarks 1. The color of lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%.
R08DS0065EJ0100 Rev.1.00 Jul 05, 2012
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A Business Partner of Renesas Electronics Corporation.
NX6350GP Series
Chapter Title
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Optical Output Power Forward Current of LD Reverse Voltage of LD Forward Current of PD Reverse Voltage of PD Operating Case Temperature Storage Temperature Lead Soldering Temperature Relative Humidity (noncondensing) Symbol PO IF VR IF VR TC Tstg Tsld RH Ratings 15 120 2.0 10.0 15 −5 to +85 −40 to +95 350 (3 sec.) 85 Unit mW mA V mA V °C °C °C %
RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL
Parameter Bias Current Symbol Ibias Conditions TC = 25°C MIN. − TYP. 30 MAX. − Unit mA
ELECTRO-OPTICAL CHARACTERISTICS (TC = −5 to +85°C, CW, BOL, unless otherwise specified)
Parameter Signaling Rate Optical Output Power Operating Voltage Threshold Current Differential Efficiency Peak Emission Wavelength Symbol PO Vop Ith Conditions MIN. − − − − − 0.28 0.16 1 264.5 1 284.5 1 304.5 1 324.5 35 − − 100 − − − −0.9 TYP. 10.3125 8.5 − 8 − 0.35 −
− − − −
PO = 8.5 mW TC = 25°C PO = 8.5 mW, TC = 25°C PO = 8.5 mW PO = 8.5 mW NX6350GP27 NX6350GP29 NX6350GP31 NX6350GP33
ηd
λp
MAX. − − 2.0 15 30 − − 1 277.5 1 297.5 1 317.5 1 337.5 − 50 50 1 000 10 100 20 0.9
Unit Gb/s mW V mA W/A nm
Side Mode Suppression Ratio Rise Time Fall Time Monitor Current Monitor Dark Current Monitor PD Terminal Capacitance Tracking Error *2
SMSR tr tf Im ID Ct γ
PO = 8.5 mW 20-80% ∗1 80-20% ∗1 VR = 1.5 V, PO = 8.5 mW VR = 3.3 V, TC = 25°C VR = 3.3 V VR = 3.3 V, f = 1 MHz Im = const. (@PO = 8.5 mW, TC = 25°C)
− − − − − − − −
dB ps ps
μA
nA pF dB
Notes: ∗1. 10.3125 Gb/s, PRBS 231 − 1, NRZ, Duty Cycle = 50% ∗2. Tracking Error: γ
Po (mW) TC = 25°C TC = –5 to +85°C
γ = 10 log
Po 8.5
[dB]
8.5
Po
0
Im
Im (mA)
R08DS0065EJ0100 Rev.1.00 Jul 05, 2012
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A Business Partner of Renesas Electronics Corporation.
NX6350GP Series SAFETY INFORMATION ON THIS PRODUCT
Chapter Title
DANGER
INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture
Warning
Laser Beam
A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure.