NX6240GP

A Business Partner of Renesas Electronics Corporation. Preliminary NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION DESCRIPTION The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. Data Sheet R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 APPLICATIONS 10 Gb/s E-PON ONU FEATURES Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point PO = 8.5 mW Ith = 8 mA ηd = 0.3 W/A TC = −5 to +85°C φ 5.6 mm 10.2 mm R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6240GP Chapter Title PACKAGE DIMENSIONS (UNIT: mm) (φ 5.6) *2 (φ 4.3) (φ 3.75) *2 *2 1.0±0.1 BOTTOM VIEW 1 2 3 4 (0.3) 110°±2° *2 (0.3) *1 Focal Point *2 FL = 10.2±0.7 PIN CONNECTION 1 LD 2 3 PD 4 15.0±1.0 1.2±0.1 3.97±0.15 4– φ 0.45 φ 2.0 P.C.D *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 Page 2 of 5 A Business Partner of Renesas Electronics Corporation. NX6240GP Chapter Title ORDERING INFORMATION Part Number NX6240GP$= Package 4-pin CAN with aspherical lens cap Pin Connections 1 LD 2 4 3 PD Remarks 1. The color of lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. R08DS0057EJ01...