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NE5531079A

California Eastern Labs
Part Number NE5531079A
Manufacturer California Eastern Labs
Description SILICON POWER MOS FET
Published Aug 14, 2014
Detailed Description SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS ...
Datasheet PDF File NE5531079A PDF File

NE5531079A
NE5531079A

Overview
SILICON POWER MOS FET NE5531079A 7.
5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.
5 V radio systems.
Die are manufactured using our NEWMOS-M1 technology and housed in a surface mount package.
This device can deliver 40.
0 dBm output power with 68% power added efficiency at 460 MHz with 7.
5 V supply voltage.
FEATURES • High output power • High linear gain • Surface mount package • Single supply : Pout = 40.
0 dBm TYP.
(VDS = 7.
5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.
5 dB TYP.
(VDS = 7.
5 V, IDset ...


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