Document
PD - 97612A
AUTOMOTIVE GRADE
Features
l l l l l
l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® Power MOSFET
D
AUIRFZ48Z AUIRFZ48ZS
55V 11mΩ 61A
V(BR)DSS RDS(on) max. ID
G S
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D D
G
D
S G
D
S
TO-220AB AUIRFZ48Z
D2Pak AUIRFZ48ZS
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
61 43 240 91 0.61 ± 20 73 120 See Fig.12a,12b,15,16 7.2 -55 to + 175 300 10 lbf•in (1.1N•m)
Units
A
c
Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and
W W/°C V mJ A mJ V/ns °C
h Peak Diode Recovery dv/dt e
c
i
d
Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC RθCS RθJA RθJA
Junction-to-Case
k
Parameter
Typ.
––– 0.50 ––– –––
Max.
1.64 ––– 62 40
Units
°C/W
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount, steady state)
j
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
www.irf.com
06/21/11
1
AUIRFZ48Z/ZS
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– 0.054 8.6 ––– ––– ––– ––– ––– ––– Typ. 43 11 16 15 69 35 39 4.5 7.5 1720 300 160 1020 230 380 ––– ––– 11 4.0 ––– 20 250 200 -200 Max. 64 16 24 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF nH ns Units nC ID = 37A VDS = 44V VGS = 10V VDD = 28V ID = 37A RG = 12Ω VGS = 10V nA V V/°C mΩ V S μA
Conditions
VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 37A VDS = 25V, ID = 37A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Conditions VDS = VGS, ID = 250μA
Breakdown Voltage Temp. Coefficient ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter 2.0 24 ––– ––– ––– ––– Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
f f
D G S
Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– 20 13 61 A 240 1.3 31 20 V ns nC
Conditions
MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 37A, VGS = 0V TJ = 25°C, IF = 37A, VDD = 30V di/dt = 100A/μs
D
Ã
f
S
Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L =0.11mH, RG .