NTP5411N

NTB5411N, NTP5411N Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220 Features Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices LED Lighting and LED Backlight Drivers DC−DC Converters DC Motor Drivers Power Supplies Secondary Side Synchronous Rectification Parameter Symbol VDSS VGS VGS ID Value 60 $20 $30 80 61 PD IDM TJ, Tstg IS EAS 166 185 −55 to 175 75 280 W A °C A mJ Unit V V V A http://onsemi.com ID MAX (Note 1) 80 A V(BR)DSS 60 V RDS(ON) MAX 10 mW @ 10 V Applications N−Channel D MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) G S 4 4 1 2 3 TO−220AB CASE 221A STYLE 5 3 D2PAK CASE 418B STYLE 2 Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C tp = 10 ms 1 Operating and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 75 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 Drain TL 260 °C NTP 5411NG AYWW 1 Gate 2 Drain 3 Source 1 Gate THERMAL RESISTANCE RATINGS Parameter Junction−to−Case (Drain) Steady State (Note 1) Symbol RqJC RqJA Max 0.9 43 Unit °C/W NTB 5411NG AYWW 2 Drain 3 Source ...