Document
SKiiP 23AC126V1
MiniSKiiP®2
3-phase bridge inverter
SKiiP 23AC126V1
Preliminary Data
Features
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# $%&'&( Typical Applications )
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Absolute Maximum Ratings
Symbol Conditions
IGBT - Inverter
,$2 9 ,$2
1 (' 6.47 3 ! : * -
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Diode - Inverter
9
1 (' 6.47 3 ! : * -
<
92
,
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- 6(4 ? !
7 ! :
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Characteristics
Symbol Conditions
IGBT - Inverter
,$ ,$67 ,$6 A7
- 1 (' / < 1 (' 6*('7 3 ,$ 1 ,$/ 1 * -
< 1 (' 6*('7 3 < 1 (' 6*('7 3 ,$ 1 (' ,/ ,$ 1 4 ,/ 1 * 9 D ,$ 1 (' ,/ ,$ 1 4 ,/ 1 * 9 D ,$ 1 (' ,/ ,$ 1 4 ,/ 1 * 9 D
6<=7
!
6 7
67 $
, 1 %44 ,/ ,$ 1 ; *' , - 1 (' / < 1 *(' 3 1 1 &4 C )
$
Diode - Inverter
, 1 ,$ ,6 A7
- 1 (' / < 1 (' 6*('7 3 < 1 (' 6*('7 3 < 1 (' 6*('7 3
6<=7
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9 G
$
- 1 (' / , 1 %44 , ,$ 1 4 ,/ < 1 *(' 3
? 1 *444 ?H
Temperature Sensor
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1 (' 6*447 3
Mechanical Data
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9
9
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2 1 (' 3/
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Values
Units
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min.
typ.
max. Units
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C
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K-
AC
1
16-02-2009 LAN
© by SEMIKRON
SKiiP 23AC126V1
Fig. 1 Typ. output characteristic
Fig. 2 Typ. rated current vs. temperature
Fig. 3 Typ. transfer characteristic
Fig. 4 Reverse bias safe operating area
Fig. 5 Turn-on /-off energy = f (IC)
2
Fig. 6 Turn-on /-off energy = f (RG)
16-02-2009 LAN
© by SEMIKRON
SKiiP 23AC126V1
Fig. 7 Typ. gate charge characteristic
Fig. 8 Typ. thermal impedance
Fig. 9 Typ. freewheeling diode forward characteristic
3
16-02-2009 LAN
© by SEMIKRON
SKiiP 23AC126V1
! / -
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
4
16-02-2009 LAN
© by SEMIKRON
.