SUM2153

SUM2153 Elektronische Bauelemente 0.81A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A E SOT-363 L MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage F DG B C K H J APPLICATION DC-DC converter circuit Load Switch REF. A B C D E F MARKING 53 Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.10 1.50 0.10 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 8° 0.650 TYP. PACKAGE INFORMATION Package SOT-363 MPQ 3K Leader Size 7 inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Power Dissipation 1 1 Symbol VDS VGS TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM TL TJ, TSTG Rating 10S 20 ±6 0.89 0.71 0.38 0.24 0.76 0.61 0.28 0.17 1.4 260 150, -55~150 0.81 0.64 0.31 0.2 0.69 0.55 0.23 0.15 Steady State Unit V V A W A W A ° C ° C Continuous Drain Current Power Dissipation 2 2 Pulsed Drain Current Lead Temperature 3 Operating Junction & Storage Temperature Range http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Jan-2013 Rev. A P...