N-channel MOSFET
SUM2153
Elektronische Bauelemente 0.81A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product...
Description
SUM2153
Elektronische Bauelemente 0.81A , 20V , RDS(ON) 310 mΩ N-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
A E
SOT-363
L
MECHANICAL DATA
Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage
F DG
B
C K
H J
APPLICATION
DC-DC converter circuit Load Switch
REF. A B C D E F
MARKING
53
Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.10 1.50 0.10 0.35
REF. G H J K L
Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 8° 0.650 TYP.
PACKAGE INFORMATION
Package SOT-363 MPQ 3K Leader Size 7 inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Power Dissipation
1 1
Symbol
VDS VGS TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C TA= 25° C TA= 70° C ID PD ID PD IDM TL TJ, TSTG
Rating
10S 20 ±6 0.89 0.71 0.38 0.24 0.76 0.61 0.28 0.17 1.4 260 150, -55~150 0.81 0.64 0.31 0.2 0.69 0.55 0.23 0.15 Steady State
Unit
V V A W A W A ° C ° C
Continuous Drain Current Power Dissipation
2
2
Pulsed Drain Current Lead Temperature
3
Operating Junction & Storage Temperature Range
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Jan-2013 Rev. A
P...
Similar Datasheet