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SSF1320N

SeCoS Halbleitertechnologie

N-channel MOSFET

SSF1320N Elektronische Bauelemente 2A , 20V , RDS(ON) 58 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A ...


SeCoS Halbleitertechnologie

SSF1320N

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Description
SSF1320N Elektronische Bauelemente 2A , 20V , RDS(ON) 58 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. A L 3 SOT-323 3 Top View C B 1 2 2 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switch Miniature SOT-323 surface mount package saves board space. K 1 E D F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.1 1.4 0.80 1.10 1.20 1.40 0.15 0.40 H J Millimeter Min. Max. 0.1 REF. 0.525 REF. 0.08 0.25 0.8 TYP. 0.65 TYP. REF. A B C D E F REF. G H J K L APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 1 PACKAGE INFORMATION Package SOT-323 MPQ 3K Leader Size 7 inch 3 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25°C TA=70°C ID IDM IS PD TA=70°C Ratings 20 ±8 2 1.7 ±20 1.6 0.34 0.22 Unit V V A A A A W W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 TA=25°C Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec RθJA Steady State ...




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