IRG7PK35UD1PbF IRG7PK35UD1-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V IC = 20A, TC =100°C TJ(max) = 150°C VCE(ON) typ. = 2.0V @ IC = 20A
G
C
C
C
G
E
C
E G
C
E
Applications Induction heating Microwave ovens Soft switching applications
n-channel
IRG7PK35UD1PbF TO‐247AC G Gate
IRG7PK35U...
