IGBT
SKM75GB12T4
SEMITRANS® 2
Fast IGBT4 Modules
SKM75GB12T4
Features
• IGBT4 = 4. generation fast trench IGBT (Infineon)
• ...
Description
SKM75GB12T4
SEMITRANS® 2
Fast IGBT4 Modules
SKM75GB12T4
Features
IGBT4 = 4. generation fast trench IGBT (Infineon)
CAL4 = Soft switching 4. generation CAL-diode
Insulated copper baseplate using DBC technology (Direct Bonded Copper)
Increased power cycling capability With integrated gate resistor For higher switching frequencies up to
20kHz UL recognized, file no. E63532
Typical Applications*
AC inverter drives UPS Electronic welders at fsw up to 20 kHz
Remarks
Case temperature limited to Tc = 125°C max.
Recommended Top = -40 ... +150°C Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint td(on) tr Eon td(off) tf
Eoff
IC = 75 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 3 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 150 °C
IC = 75 A VGE = +15/-15 V RG on = 1 Ω RG off = 1 Ω
Tj ...
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