Document
SKM100GAL12T4
SEMITRANS® 2
Fast IGBT4 Modules
SKM100GAL12T4
Features
• IGBT4 = 4. generation fast trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to
20kHz • UL recognized, file no. E63532
Typical Applications*
• Electronic welders at fsw up to 20 kHz • DC/DC – converter • Brake chopper • Switched reluctance motor
Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C • Product reliability results valid
for Tj = 150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint
IC = 100 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 3.8 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V Tj = 25 °C
Values
1200 160 123 100 300 -20 ... 20
10
-40 ... 175
121 91 100 300 550 -40 ... 175
121 91 100 300 550 -40 ... 175
200 -40 ... 125
4000
Unit
V A A A A V
µs
°C
A A A A A °C
A A A A A °C
A °C V
min.
typ.
max. Unit
1.80
2.05
V
2.20
2.40
V
0.8
0.9
V
0.7
0.8
V
10.00 11.50 m
15.00 16.00 m
5
5.8
6.5
V
1
mA
mA
6.15
nF
0.40
nF
0.345
nF
565
nC
7.5
GAL
© by SEMIKRON
Rev. 1 – 03.09.2013
1
SKM100GAL12T4
SEMITRANS® 2
Fast IGBT4 Modules
SKM100GAL12T4
Features
• IGBT4 = 4. generation fast trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to
20kHz • UL recognized, file no. E63532
Typical Applications*
• Electronic welders at fsw up to 20 kHz • DC/DC – converter • Brake chopper • Switched reluctance motor
Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C • Product reliability results valid
for Tj = 150°C
Characteristics
Symbol td(on) tr Eon td(off) tf
Eoff
Conditions
VCC = 600 V
Tj = 150 °C
IC = 100 A VGE = ±15 V RG on = 1 RG off = 1
Tj = 150 °C Tj = 150 °C Tj = 150 °C
di/dton = 1800 A/µs Tj = 150 °C
di/dtoff = 1130 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Inverse diode
VF = VEC
IF = 100 A VGE = 0 V chiplevel
Tj = 25.