DatasheetsPDF.com

SKM100GAL12T4 Dataheets PDF



Part Number SKM100GAL12T4
Manufacturers Semikron International
Logo Semikron International
Description IGBT
Datasheet SKM100GAL12T4 DatasheetSKM100GAL12T4 Datasheet (PDF)

SKM100GAL12T4 SEMITRANS® 2 Fast IGBT4 Modules SKM100GAL12T4 Features • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 Typical Applications* • Electronic welders at fsw up to 20 kHz • DC/DC – converter • Brake chopper • Switched.

  SKM100GAL12T4   SKM100GAL12T4



Document
SKM100GAL12T4 SEMITRANS® 2 Fast IGBT4 Modules SKM100GAL12T4 Features • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 Typical Applications* • Electronic welders at fsw up to 20 kHz • DC/DC – converter • Brake chopper • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Freewheeling diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 100 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 3.8 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 150 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C Values 1200 160 123 100 300 -20 ... 20 10 -40 ... 175 121 91 100 300 550 -40 ... 175 121 91 100 300 550 -40 ... 175 200 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A A A A A °C A °C V min. typ. max. Unit 1.80 2.05 V 2.20 2.40 V 0.8 0.9 V 0.7 0.8 V 10.00 11.50 m 15.00 16.00 m 5 5.8 6.5 V 1 mA mA 6.15 nF 0.40 nF 0.345 nF 565 nC 7.5  GAL © by SEMIKRON Rev. 1 – 03.09.2013 1 SKM100GAL12T4 SEMITRANS® 2 Fast IGBT4 Modules SKM100GAL12T4 Features • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 Typical Applications* • Electronic welders at fsw up to 20 kHz • DC/DC – converter • Brake chopper • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Characteristics Symbol td(on) tr Eon td(off) tf Eoff Conditions VCC = 600 V Tj = 150 °C IC = 100 A VGE = ±15 V RG on = 1  RG off = 1  Tj = 150 °C Tj = 150 °C Tj = 150 °C di/dton = 1800 A/µs Tj = 150 °C di/dtoff = 1130 A/µs Tj = 150 °C Rth(j-c) per IGBT Inverse diode VF = VEC IF = 100 A VGE = 0 V chiplevel Tj = 25.


SKM50GAL12T4 SKM100GAL12T4 SKM150GAL12T4


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)