Fast S-IGBT
Preliminary data
SGP30N60, SGB30N60, SGW30N60
Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous gene...
Description
Preliminary data
SGP30N60, SGB30N60, SGW30N60
Fast S-IGBT in NPT-Technology 75 % lower Eoff compared to previous generation Short circuit withstand time 10 µs Designed for moderate and high frequency applications:
- SMPS and PFC up to 150 kHz - Inverter, Motor controls NPT-Technology for 600V applications offers: - tighter parameter distribution - higher ruggedness, temperature stable behaviour - parallel switching capability combined with low conduction losses
Type SGP30N60 SGB30N60 SGW30N60
VCE
600 V
IC
30 A
VCE(sat)
2.5 V
Tj
Package TO-263AB TO-247AC
Ordering Code Q67041-A4713-A2 Q67041-A4713-A3 Q67040-S4237
150 °C TO-220AB
Maximum Ratings Parameter Collector-emitter voltage DC collector current Symbol Value 600 41 30 Unit V A
VCE IC
T C = 25 °C T C = 100 °C
Pulsed collector current, tp limited by T jmax Gate-emitter voltage Avalanche energy, single pulse
ICpuls VGE EAS
112 ±20 165 V mJ
I C = 30 A, VCC = 50 V, R GE = 25 Ω,
start at T j = 25 °C Short circuit withstand time Power dissipation
1)
tsc Ptot Tj , Tstg
10 250 -55...+150 260
µs W °C
VGE = 15 V, VCC = 600 V, T j ≤ 150 °C T C = 25 °C
Operating junction and storage temperature Soldering temperature, 1.6mm from case for 10s -
1) allowed number of short circuits: <1000; time between short circuits: >1s
Semiconductor Group 1 02 / 1999
Preliminary data
SGP30N60, SGB30N60, SGW30N60
Thermal Resistance Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - a...
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