IRFH4253DPbF
HEXFET® Power MOSFET Q1 VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 25 4.60 10 45 Q2 25 1...
IRFH4253DPbF
HEXFET® Power MOSFET Q1 VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 25 4.60 10 45 Q2 25 1.45 31 45 V m nC A
Applications Control and Synchronous MOSFETs for synchronous buck converters
DUAL PQFN 5X6 mm Features Control and synchronous MOSFETs in one package Low charge control MOSFET (10nC typical) Low RDSON synchronous MOSFET (<1.45m) Intrinsic
Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL2, Industrial Qualification Base part number IRFH4253DPbF Dual PQFN 5mm x 6mm Package Type Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses Environmentally friendlier Increased reliability Orderable Part Number IRFH4253DTRPbF Q1 Max. Q2 Max. ± 20 64 145 51 116 45 120 31 20 0.25 45 580 50 32 0.40 W W/°C °C Units V A
Standard Pack Form Quantity Tape and Reel 4000
Absolute Maximum Ratings VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 70°C TJ TSTG Thermal Resistance Parameter RJC (Bottom) RJC (Top) RJA RJA (<10s) Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Rang...