IRFH4253DPbF

IRFH4253DPbF HEXFET® Power MOSFET Q1 VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 25 4.60 10 45 Q2 25 1.45 31 45 V m nC A       Applications  Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Control and synchronous MOSFETs in one package Low charge control MOSFET (10nC typical) Low RDSON synchronous MOSFET (<1.45m) Intrinsic Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL2, Industrial Qualification Base part number   IRFH4253DPbF   Dual PQFN 5mm x 6mm Package Type Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses  Environmentally friendlier Increased reliability Orderable Part Number IRFH4253DTRPbF   Q1 Max. Q2 Max. ± 20   64 145 51 116 45 120 31 20 0.25 45 580 50 32 0.40 W W/°C °C   Units V A Standard Pack Form Quantity Tape and Reel 4000 Absolute Maximum Ratings VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 70°C TJ TSTG Thermal Resistance Parameter RJC (Bottom) RJC (Top) RJA RJA (<10s) Junction-to-Case  Junction-to-Case  Junction-to-Ambient  Junction-to-Ambient  Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Rang...