SMG5403

SMG5403 Elektronische Bauelemente -2.6A , -30V , RDS(ON) 115 mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG5403 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. 1 SC-59 A L 3 3 Top View 2 C B 1 2 FEATURES Lower Gate Threshold Voltage Small Package Outline K E D F REF. G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J MARKING 5403 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch A B C D E F 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range TJ, TSTG 1 3 Symbol VDS VGS TA=25° C ID TA=70° C IDM TA=25° C PD Ratings -30 ±12 -2.6 Unit V V A -2.2 -10 1.38 0.01 -55~150 A W W/° C ° C Thermal Resistance Rating Maximum Junction to Ambient 3 RθJA 90 ° C/W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Sep-2012 Rev. A Page 1 of 4 SMG5403 Elektronische Bauelemente -2.6A , -30V , RDS(ON) 115 mΩ P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Par...