SCG2019

Elektronische Bauelemente SCG2019 -0.62A , -20V , RDS(ON) 810 m P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage APPLICATION  DC-DC converter circuit  Load Switch MARKING P9   = Date Code PACKAGE INFORMATION Package MPQ SOT-523 3K Leader Size 7 inch SOT-523 A M 3 Top View CB 12 KL E 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.7 0.9 0.7 0.9 0.9 1.1 0.15 0.35 REF. G H J K L M Millimeter Min. Max. - 0.1 0.55 REF. 0.1 0.2 - 0.5 TYP. 0.25 0.325 Top View MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 1 TA= 25°C TA= 70°C Power Dissipation 1 TA= 25°C TA= 70°C Continuous Drain Current 2 TA= 25°C TA= 70°C Power Dissipation 2 Pulsed Drain Current 3 TA= 25°C TA= 70°C Lead Temperature Operating Junction & Storage Temperature Range VDS VGS ID PD ID PD IDM TL TJ, TSTG Rating 10S Steady State -20 ±5 -0.73 -0.62 -0.58 -0.5 0.38 0.28 0.24 0.18 -0.61 -0.55 -0.49 -0.44 0.27 0.22 0.17 0.14 -1.2 260 150, -55~150 Unit V V A W A W A °C °C http://www.SeCoSGmbH...