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NX5330SA Dataheets PDF



Part Number NX5330SA
Manufacturers California Eastern Labs
Logo California Eastern Labs
Description LASER DIODE
Datasheet NX5330SA DatasheetNX5330SA Datasheet (PDF)

LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectometer (OTDR). This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain FEATURES • High output power • Long wavelength PO = 350 mW @ IFP = 1 000 mA*1 C = 1 310 nm *1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No. PL10699EJ01V.

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LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode. Reflectometer (OTDR). This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain FEATURES • High output power • Long wavelength PO = 350 mW @ IFP = 1 000 mA*1 C = 1 310 nm *1 Pulse Conditions: Pulse width (PW) = 10 s, Duty = 1% Document No. PL10699EJ01V0DS (1st edition) Date Published January 2008 NS NX5330SA PACKAGE DIMENSION (UNIT: mm) 2 Data Sheet PL10699EJ01V0DS NX5330SA ORDERING INFORMATION Part Number NX5330SA-AZ* Package 4-pin CAN with flat glass cap *Note Please refer to the last page of this data sheet “Compliance with EU Directives” for Pb-Free RoHs Compliance Information. ABSOLUTE MAXIMUM RATINGS (T C = 25C, unless otherwise specified) Parameter Pulsed Forward Current Reverse Voltage Operating Case Temperature Storage Temperature Lead Soldering Temperature Relative Humidity (noncondensing) *1 Symbol IFP VR TC Tstg Tsld RH Ratings 1.2 2.0 20 to +60 40 to +85 350 (3 sec.) 85 Unit A V C C C % *1 Pulse Condition: Pulse Width (PW) = 10 s, Duty = 1% ELECTRO-OPTICAL CHARACTERISTICS (T C = 25C) Parameter Forward Voltage Symbol VFP Conditions IFP = 1 000 mA, PW = 10  s, Duty = 1% Threshold Current Optical Output Power Ith PO C  IFP = 1 000 mA, PW = 10  s, Duty = 1% Center Wavelength RMS (20 dB), IFP = 1 000 mA, PW = 10  s, Duty = 1% Spectral Width RMS (20 dB), IFP = 1 000 mA, PW = 10  s, Duty = 1% 4.5 10.0 nm 1 290 1 310 1 330 nm 200 35 350 60 mA mW MIN. TYP. 2.5 MAX. 4.0 Unit V Data Sheet PL10699EJ01V0DS 3 NX5330SA REFERENCE Document Name Opto-Electronics Devices Pamphlet Document No. PX10160E 4 Data Sheet PL10699EJ01V0DS NX5330SA SAFETY INFORMATION ON THIS PRODUCT Warning Laser Beam A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. A glass-fiber is attached on the product. Handle with care. • When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part or fragments. Caution Optical Fiber .


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