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NR6800

California Eastern Labs

80um InGaAs AVALANCHE PHOTO DIODE

PHOTO DIODE NR6800 Series  80  m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6800 Series is...


California Eastern Labs

NR6800

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Description
PHOTO DIODE NR6800 Series  80  m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6800 Series is an InGaAs avalanche photo diode, and can be used in OTDR systems. FEATURES Small dark current Small terminal capacitance High sensitivity High speed response Detecting area size ID = 5 nA Ct = 0.50 pF @ 0.9 V(BR)R S = 0.94 A/W @  = 1 310 nm, M = 1 fC = 1.0 GHz MIN. @  = 1 310 nm, M = 10  80 m Document No. PL10786EJ01V0DS (1st edition) Date Published December 2009 NS NR6800 Series PACKAGE DIMENSION (UNIT: mm) 2 Data Sheet PL10786EJ01V0DS NR6800 Series Data Sheet PL10786EJ01V0DS 3 NR6800 Series ORDERING INFORMATION Part Number NR6800EZ-AZ NR6800SZ-AZ Package 3-pin CAN with ball lens cap 3-pin CAN with flat glass cap Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. ABSOLUTE MAXIMUM RATINGS Parameter Forward Current Reverse Current Operating Case Temperature Storage Temperature Lead Soldering Temperature Relative Humidity (noncondensing) Symbol IF IR TC Tstg Tsld RH Ratings 10 0.5 40 to +85 40 to +85 350 (3 sec.) 85 Unit mA mA C C C % 4 Data Sheet PL10786EJ01V0DS NR6800 Series ELECTRO-OPTICAL CHARACTERISTICS (T C = 25C, unless otherwise specified) Parameter Reverse Breakdown Voltage Temperature Coefficient of Reverse Breakdown Voltage Dark Current Terminal Capacitance Cut-off Frequency Sensitivity Multiplication Factor ID Ct fC S M VR = VBR  0.9 VR = VBR ...




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