NR6300EZ

PHOTO DIODE NR6300EZ  30  m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems. FEATURES Small dark current Small terminal capacitance High sensitivity High speed response Detecting area size ID = 5 nA Ct = 0.35 pF @ 0.9 V(BR)R S = 0.94 A/W @  = 1 310 nm, M = 1 fC = 2.5 GHz MIN. @  = 1 310 nm, M = 10  30 m Document No. PL10701EJ02V0DS (2nd edition) Date Published January 2010 NS The mark  shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NR6300EZ PACKAGE DIMENSION (UNIT: mm) 2 Data Sheet PL10701EJ02V0DS NR6300EZ ORDERING INFORMATION Part Number NR6300EZ-AZ Package 3-pin CAN with ball lens cap Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. ABSOLUTE MAXIMUM RATINGS Parameter Forward Current Reverse Current Operating Case Temperature Storage Temperature Lead Soldering Temperature Relative Humidity (noncondensing) Symbol IF IR TC Tstg Tsld RH Ratings 10 0.5 40 to +85 40 to +85 350 (3 sec.) 85 Unit mA mA C C C % Data Sheet PL10701EJ02V0DS 3 NR6300EZ ELECTRO-OPTICAL CHARACTERISTICS (T C = 25C, unless otherwise specified) Parameter Reverse Breakdown Voltage Temperature Coefficient of Reverse Breakdown Voltage Dark Current Terminal Capacitance Cut-off Frequency Sensitivity Multiplicati...