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SEMIX703GD126HDC Dataheets PDF



Part Number SEMIX703GD126HDC
Manufacturers Semikron International
Logo Semikron International
Description IGBT
Datasheet SEMIX703GD126HDC DatasheetSEMIX703GD126HDC Datasheet (PDF)

SEMiX703GD126HDc SEMiX® 33c Trench IGBT Modules SEMiX703GD126HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM .

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SEMiX703GD126HDc SEMiX® 33c Trench IGBT Modules SEMiX703GD126HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg Tterminal = 80 °C Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf IC = 450 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C chiplevel Tj = 25 °C Tj = 125 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 18 mA VGE = 0 V VCE = 1200 V Tj = 25 °C Tj = 125 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 15 V Tj = 25 °C VCC = 600 V IC = 450 A VGE = ±15 V RG on = 1.6  RG off = 1.6  Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Eoff Tj = 125 °C Rth(j-c) per IGBT Values 1200 642 449 450 900 -20 ... 20 10 -40 ... 150 561 384 450 900 2900 -40 ... 150 600 -40 ... 125 4000 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 1.7 2.10 V 2.0 2.45 V 1 1.2 V 0.9 1.1 V 1.6 2.0 m 2.4 3.0 m 5 5.8 6.5 V 5 mA mA 32.3 nF 1.69 nF 1.46 nF 3600 nC 1.67  310 ns 60 ns 32 mJ 680 ns 135 ns 68 mJ 0.061 K/W GD © by SEMIKRON Rev. 1 – 03.07.2013 1 SEMiX703GD126HDc SEMiX® 33c Trench IGBT Modules SEMiX703GD126HDc Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design Characteristics Symbol Conditions Inverse diode VF = VEC IF = 450 A VGE = 0 V chiplevel Tj = 25 °C Tj = 125 °C VF0 chiplevel Tj = 25 °C Tj = 125 °C rF IRRM Qrr Err Rth(j-c) chiplevel Tj = 25 °C Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 8500 A/µs VGE = -15 V Tj = 125 °C VCC = 600 V Tj = 125 °C per diode Module LCE RCC'+EE' res., terminal-chip TC = 25 °C TC = 125 °C Rth(c-s) per module Ms to heat sink (M5) Mt to terminals (M6) min. 0.9 0.7 1.1 1.6 3 2.5 typ. 1.6 1.6 1 0.8 1.3 1.8 580 130 60 20 0.7 1 0.014 max. 1.80 1.8 1.1 0.9 1.6 2.0 0.11 5 5 w Temperature Sensor R100 Tc=100°C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 900 493 ± 5% 3550 ±2% Unit V V V V m m A µC mJ K/W nH m m K/W Nm Nm Nm g  K GD 2 Rev. 1 – 03.07.2013 © by SEMIKRON SEMiX703GD126HDc Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 03.07.2013 3 SEMiX703GD126HDc Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 03.07.2013 © by SEMIKRON SEMiX703GD126HDc SEMiX 33c pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 03.07.2013 5 .


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