N-Channel MOSFET
SSU04N65
Elektronische Bauelemente 4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A ...
Description
SSU04N65
Elektronische Bauelemente 4A , 650V , RDS(ON) 2.6Ω N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSU04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-263
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available
Drain Date Code
Millimeter Min. Max. 4.00 4.85 0.68 1.00 0.00 0.30 0.36 0.53 1.50 REF 2.29 2.79 9.60 10.45 Millimeter Min. Max. 1.10 1.45 1.34 REF 8.0 9.15 2.54 REF 14.6 15.85 1.27 REF
MARKING
4N65
Gate
REF. A b L4 C L3 L1 E
REF. c2 b2 D e L L2
PACKAGE INFORMATION
Package TO-263 MPQ 0.8K Leader Size 13 inch
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V 1 Pulsed Drain Current
2
Symbol
VDS VGS TC=25°C TC=100°C ID IDM TC=25°C TA=25°C PD EAS IAS TJ, TSTG
Rating
650 ±30 4 2.6 8 112 2 2.36 2 -55~150
Unit
V V A A A W mJ A °C
Total Power Dissipation 4 Single Pulse Avalanche Energy 3 Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient (PCB 1 mount) Maximum Thermal Resistance Junction-Case 1 RθJA RθJC 62 1.12 °C / ...
Similar Datasheet